page . 1 may 13,2010-rev.01 SB2045LFCT dual high-voltage schottky rectifier voltage 45 volts 20 amperes features ? low forward voltage drop, low power losses ? high efficiency operation ? in compliance with eu rohs 2002/95/ec directives mechanical data case : ito-220ab, plastic terminals : solderable per mil-std-750, method 2026 weight: 0.055 ounces, 1.5615 grams current maximum ratings(t a =25 o c unless otherwise noted) electrical characteristics(t a =25 o c unless otherwise noted) note.1.pulse test : 300 s pulse width, 1% duty cycle 2.pulse test : pulse width < 40ms .027(.67) .022(.57) .177(4.5) .137(3.5) parameter symbol value unit maximum repetitive peak reverse voltage v rrm 45 v maximum average forward rectified current per device per diode i f(av) 20 10 a peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode per diode i fsm 145 a typical thermal resistance r jc 4.5 o c / w operating junction t j -55 to + 125 o c storage temperature range t stg -55 to + 150 o c parameter symbol test conditions min. typ. max. unit breakdown voltage v br i r =1ma 50 - - v instantaneous forward voltage per diode (1) v f i f =5a i f =10a t j =25 o c - - 0.42 0.46 0.46 0.52 v reverse current per diode (2) i r v r =45v t j =25 o c t j =100 o c - - 100 - 500 100 a ma
page . 2 may 13,2010-rev.01 SB2045LFCT fig.1 typical forward characteristics 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 v f , forward voltage (v) i f , forward current (a) t j = 25c t j = 100c t j = 125c t j = 75c per diode fig.2 typical reverse characteristics 0.01 0.1 1 10 100 20 40 60 80 100 percent of rated peak reverse voltage (%) i r , leakage current (ma) per diode t j = 25c t j = 100c fig.3 typical junction capacitance 10 100 1000 10000 0.1 1 10 100 v r , reverse bias voltage (v) c j , junction capacitance (pf) per diode 0.00 2.00 4.00 6.00 8.00 10.00 12.00 0 25 50 75 100 125 150 t c , case temperature (c) i f , forward current (a) per diode fig.4 forward current derating curve
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